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| APT35GT120JU3 ISOTOP(R) Buck chopper Trench + Field Stop IGBT(R) VCES = 1200V IC = 35A @ Tc = 80C C Application * AC and DC motor control * Switched Mode Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Low conduction losses * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant G E A E G C A ISOTOP Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C V W A 27 34 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-7 APT35GT120JU3 - Rev 1 June, 2006 Max ratings 1200 55 35 80 20 260 Unit V A APT35GT120JU3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 35A Tj = 125C VGE = VCE, IC = 3mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 Max 5 2.1 6.5 500 Unit mA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Resistive Switching (25C) VGE = 15V VBus = 600V IC = 35A R G = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 35A R G = 27 Min Typ 2530 132 115 85 30 420 62 90 45 520 90 5.8 4.6 Max Unit pF ns ns mJ www.microsemi.com 2-7 APT35GT120JU3 - Rev 1 June, 2006 APT35GT120JU3 Chopper diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/s IF = 30A VR = 800V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 2.0 2.3 1.8 32 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 31 370 500 5 12 660 3450 220 4650 37 ns Max 2.5 250 500 Unit V A pF Tj = 125C Tj = 25C Tj = 125C A nC ns nC A Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min IGBT Diode 2500 -55 Typ Max 0.48 1.1 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 29.2 Typical IGBT Performance Curve Operating Frequency vs Collector Current 60 50 40 30 20 10 0 0 10 20 30 I C (A) 40 50 60 V CE=600V D=50% RG=27 TJ=125C Fmax, Operating Frequency (kHz) www.microsemi.com 3-7 APT35GT120JU3 - Rev 1 June, 2006 APT35GT120JU3 Output Characteristics (V GE =15V) Output Characteristics 70 60 TJ = 125C V GE =17V VGE=13V V GE=15V VGE=9V 70 60 50 IC (A) TJ=25C TJ=125C IC (A) 50 40 30 20 10 0 40 30 20 10 0 0 1 2 VCE (V) 3 4 0 1 2 V CE (V) 3 4 Transfert Characteristics 70 60 50 IC (A) 40 30 20 10 0 5 6 7 8 9 V GE (V) 10 11 12 TJ=25C TJ=125C E (mJ) 14 12 10 8 6 4 2 0 10 Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 27 TJ = 125C Eon Eoff 20 30 40 50 60 70 80 IC (A) Reverse Safe Operating Area 90 80 70 60 IC (A) 50 40 30 20 10 0 VGE=15V TJ=125C RG=27 0 400 800 VCE (V) 1200 1600 Eoff Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 10 15 20 25 30 35 40 45 Gate Resistance (ohms) 50 55 V CE = 600V V GE =15V IC = 35A TJ = 125C Eon maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.9 0.45 0.4 0.7 0.35 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 Thermal Impedance (C/W) IGBT Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-7 APT35GT120JU3 - Rev 1 June, 2006 APT35GT120JU3 Typical Diode Performance Curve www.microsemi.com 5-7 APT35GT120JU3 - Rev 1 June, 2006 APT35GT120JU3 www.microsemi.com 6-7 APT35GT120JU3 - Rev 1 June, 2006 APT35GT120JU3 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Anode Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Emitter Dimensions in Millimeters and (Inches) Gate APT35GT120JU3 - Rev 1 June, 2006 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 |
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